7 04 2026 | Innovation et technologique
This study proposes a 300 W class Gallium Nitride (GaN) Solid-State Power Amplifier (SSPA)-based microwave plasma generator system for implementing next-generation light sources with high brightness and color rendering at 2.45 GHz. To overcome the lifetime limitations...
7 04 2026 | Actualité Spatial, Innovation et technologique
Optical materials power the magic of modern photonics, from smartphone cameras to global fiber-optic networks, by precisely shaping light’s transmission, reflection, absorption, refraction, and emission in lasers, sensors, and beyond. Selecting the right optical...
7 04 2026 | Actualité Défense et Sécurité, Actualité Spatial, Innovation et technologique
Groundbreaking research is underway at Northrop Grumman’s Microelectronics Center (NGMC) which is reshaping physicists’ understanding of diamonds, positioning them as the next-generation material used in manufacturing microelectronics. Today, successful tests are...
7 04 2026 | Actualité Défense et Sécurité, Innovation et technologique
FN Media Group Presents Oilprice.com Market Commentary NEW YORK, March 31, 2026 /PRNewswire/ — REalloys (ALOY) is assembling the only non-Chinese supply chain for a component powering nearly everything the modern economy runs on — but one that almost nobody...
30 03 2026 | Innovation et technologique
Wide bandgap (WBG) semiconductors such as gallium nitride (GaN) and silicon carbide (SiC) have revolutionized modern power electronics by enabling devices that operate at higher voltages, temperatures, and switching frequencies than their silicon counterparts. This...
