In this paper, we propose a new structure of 4H-SiC-based ESD(Electrostatic discharge) protection device with low on-resistance and excellent high-temperature characteristics while improving trigger technology by applying floating technology. By TLP measurement, the...
La France, en tant qu’un des leaders de l’industrie aéronautique mondiale, dispose d’atouts pour être pionnière dans la décarbonation du transport aérien, en actionnant simultanément plusieurs leviers complémentaires complexes et ambitieux, parmi lesquels figure la...
Microchip Technology Inc. has expanded its SiC portfolio by releasing the industry’s lowest on-resistance [RDS(on)] 3.3kV SiC MOSFETs and the highest current-rated SiC SBDs obtainable in the market, allowing designers to take advantage of ruggedness, reliability...
ROHMs 150V GaN HEMTs, GNE10xxTB series (GNE1040TB) improve the gate withstand voltage (rated gate-source voltage) to an industry-leading 8V – ideally to be used in power supply circuits for industrial equipment including base stations and data centres together with...
For decades, silicon-based power transistors (MOSFETs, field-effect transistors) formed the backbone of power conversion systems that convert alternating current (AC) into direct current (DC) and vice versa, or DC from low voltage to high voltage and vice versa. In...
