10 05 2021 | Innovation et technologie
Power switches based on the wide bandgap (WBG) material gallium nitride (GaN) enable excellent efficiency and high switching frequency, starting a new era in power electronics. To support this development, Infineon Technologies AG adds the new CoolGaN IPS family of...
10 05 2021 | Innovation et technologie
Geneva, May 6, 2021 – STMicroelectronics (NYSE: STM), a global semiconductor leader serving customers across the spectrum of electronics applications, has announced a new family of ST Intelligent and Integrated Gallium Nitride (GaN) solutions, STi2GaN. STi2GaN is an...
19 04 2021 | Actualité Défense et Sécurité
Les technologies à base de nitrure de gallium (GaN) ont fait ces dernières années l’objet d’études qui ont confirmé leur aptitude à apporter de véritables gains en puissance, compacité, efficacité, rendement et fiabilité jusqu’alors inaccessibles....
12 04 2021 | Actualité Aéronautique, Actualité Défense et Sécurité
SiC merged reverse conductive (MRC) power devices composed of both unipolar devices and bipolar devices have been developed to achieve a smaller chip size, a lower power loss, and a higher reliability. SiC MRC power devices such as SiC MRC‐MOSFET and SiC MRC‐IGBT can...
