15 12 2025 | Innovation et technologique
Microelectronic devices in modern systems are working continuously for prolonged periods of many years. Thus, there is a crucial need for reliability model that will enable us to predict precisely the life cycle of the device and point out on the governing failure...
15 12 2025 | Innovation et technologique
La plateforme SiC 300 mm de l’Américain entend répondre aux enjeux d’efficacité thermique des centres de données d’IA et réduire les coûts des puces de puissance pour les véhicules électriques, les énergies renouvelables et l’automatisation industrielle, entre autres....
15 12 2025 | Innovation et technologique
TORRANCE, Calif. and HYDERABAD, India, Dec. 08, 2025 (GLOBE NEWSWIRE) — Navitas Semiconductor Corporation (Nasdaq: NVTS), the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors and Cyient...
15 12 2025 | Actualité Spatial, Innovation et technologique
The demand for smaller satellites, with sophisticated computational capabilities and reliable and robust onboard processor systems to support the five to ten-year duration of a mission, is pushing the limits of the latest ultra‑deep‑submicron FPGAs and ASICs and their...
9 12 2025 | Innovation et technologique
Infineon Technologies’ gallium nitride (GaN) technology is powering Enphase Energy Inc.’s next-generation solar microinverters. Infineon’s CoolGaN bi-directional switch (BDS) technology enables significant enhancements in power output, energy efficiency, and system...
