Infineon Technologies a lancé une famille de transistors en nitrure de gallium (GaN) résistants aux radiations, fabriqués en interne dans sa propre fonderie. Les transistors GaN à haute mobilité d’électrons (HEMT) sont basés sur la technologie CoolGaN d’Infineon et...
Movable antenna (MA) has shown significant potential for improving the performance of integrated sensing and communication (ISAC) systems. In this paper, we model an MA-aided ISAC system operating in a communication full-duplex mono-static sensing framework. The...
Infineon Technologies AG is introducing the CoolGaN bidirectional switch (BDS) 650 V G5, a gallium nitride (GaN) switch capable of actively blocking voltage and current in both directions. Featuring a common-drain design and a double-gate structure, it leverages...
STMicroelectronics says its new high-voltage half-bridge gate drivers for GaN applications add extra flexibility and features for greater efficiency and robustness. The latest STDRIVEG610 and STDRIVEG611 give designers two options to manage GaN devices in power...
Infineon to use new SiC TSJ technology to expand efficiency and compactness of CoolSiC range Infineon is introducing trench-based SiC superjunction (TSJ) technology, adding to its existing CoolSiC product offering spanning 400 V to 3.3 kV “With the introduction of the...
