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Research on High Threshold Voltage, High Output Current and Low Gate Leakage Current p-GaN and Grooved Gate Composite Gate HEMT with N-Well and AlGaN–GaN–AlGaN Double Barrier Cap Layer

Research on High Threshold Voltage, High Output Current and Low Gate Leakage Current p-GaN and Grooved Gate Composite Gate HEMT with N-Well and AlGaN–GaN–AlGaN Double Barrier Cap Layer

24 11 2025 | Innovation et technologique

Enhanced AlGaN-GaN high-electron-mobility transistors (HEMTs) offer significant advantages for high-reliability circuit design. This study proposes a hybrid gate structure combining a p-GaN cap with a recessed gate, utilizing a double-barrier AlGaN-Ga-AlGaN gate stack...