6 09 2021 | Actualité Défense et Sécurité, Actualités NAE - RTI
The drain to gate capacitance (Miller capacitance) of SiC MOSFETs leads to the Miller effect during switching transients. The Miller capacitance in a phase-leg configuration causes the crosstalk, the interaction between the two complementary switches, and the Miller...
6 09 2021 | Actualité Aéronautique, Actualité Défense et Sécurité, Actualités NAE - RTI
This work presents a comprehensive study on the behaviour and operation of a vertical 1.2 kV 4H-SiC junctionless power FinFET. The increased bulk conduction in the channel of this topology may bring reductions in the channel resistance compared to trench MOSFETs,...
6 09 2021 | Actualité Aéronautique, Actualité Défense et Sécurité, Actualités NAE - RTI
With increasing applications of silicon carbide (SiC) power MOSFETs, more attention is being paid to reliability issues, among which the long-term stability of the gate threshold voltage is of paramount importance. In this study, laboratory experiments are conducted...
28 06 2021 | Actualité Aéronautique, Actualité Défense et Sécurité
We investigate the accuracy and reliability of temperature mapping using scanning thermal microscopy (SThM) in contact and PeakForce tapping mode on the example of a GaN-on-SiC high electron mobility transistor (HEMT). HEMT steady-state and transient surface...
28 06 2021 | Actualité Aéronautique, Actualité Défense et Sécurité
The ingenious multicomponent microstructure design provides a suitable strategy for gaining high-performance multi-functional integrated materials. Herein, the thermally stable SiC/Si3N4 composite ceramic felt was successfully fabricated via two-step carbothermal...
