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Transphorm Inc.— the leader in the design and manufacturing of the highest reliability and first JEDEC- and AEC-Q101 qualified high voltage gallium nitride (GaN) power semiconductors — today announced availability of its Gen IV GaN platform. Transphorm’s latest technology offers notable advancements in performance, designability, and cost when compared to its previous GaN generations. Related, Transphorm also announced today that Gen IV and future platform generations will be called SuperGaN™ technologies.

Source : Transphorm Introduces SuperGaN™ Power FETs with Launch of Gen IV GaN Platform