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Transphorm Inc of Goleta, near Santa Barbara, CA, USA — which designs and manufactures JEDEC- and AEC-Q101-qualified high-voltage gallium nitride (GaN) field-effect transistors (FETs) — says that Hangzhou Zhongheng Electric Co Ltd (HZZH) has developed an ultra-efficient, GaN-based power module. The 3kW ZHR483KS uses Transphorm’s GaN devices to reach 98% efficiency, making it the telecoms industry’s most efficient GaN-powered module to date, it is reckoned. Original design manufacturers (ODMs) can swap the ZHR483KS — which offers standardized output connector configurations — with existing same-wattage power modules to achieve a high-reliability, higher-performing solution at a lower overall system cost.

 

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