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Chaque semaine NAE vous propose une veille technologique sur une thématique de sa feuille de route technologique.

Aujourd’hui retrouvez sa veille sur la thématique Fiabilité électronique qui abordera :

  • Stability and Reliability of Lateral GaN Power Field-Effect Transistors
    Source : ieeexplore.ieee.org – 2020-05-04
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  • Packaging for SiC power device
    Source : ieeexplore.ieee.org – 2020-05-03
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  • A Review of Raman Thermography for Electronic and Opto-Electronic Device Measurement With Submicron Spatial and Nanosecond Temporal Resolution
    Source : ieeexplore.ieee.org –  2020-05-03
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  • Thermal Characterization of SiC Modules for Variable Frequency Drives
    Source : ieeexplore.ieee.org – 2020-05-03
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  • A Novel Method for Monitoring the Junction Temperature of SiC MOSFET On-line Based on On-state Resistance
    Source : ieeexplore.ieee.org – 2020-05-03
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  • Dynamic Temperature Measurements of a GaN DC–DC Boost Converter at MHz Frequencies
    Source : ieeexplore.ieee.org – 2020-05-03
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  • Analysis of an AlGaN/AlN Super-Lattice Buffer Concept for 650-V Low-Dispersion and High-Reliability GaN HEMTs
    Source : ieeexplore.ieee.org – 2020-05-03
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  • Reliability of SiC MOSFET with Danfoss Bond Buffer Technology in Automotive Traction Power Modules
    Source : ieeexplore.ieee.org – 2020-05-03
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  • Transient thermal dynamics of GaN HEMTs
    Source : ieeexplore.ieee.org – 2020-05-02
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  • Transphorm introduces SuperGaN power FETs with launch of Gen IV GaN platform – Semiconductor Today
    Source : www.semiconductor-today.com – 2020-04-14
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  • Transphorm Introduces SuperGaN™ Power FETs with Launch of Gen IV GaN Platform – Yahoo Finance
    Source : finance.yahoo.com – 2020-04-14
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