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Chaque semaine NAE vous propose une veille technologique sur une thématique de sa feuille de route technologique.

Aujourd’hui retrouvez sa veille sur la thématique Fiabilité électronique qui abordera :

  • Highly Reliable GaN-MOSFETs with High Channel Mobility Gate by Selective-Area Crystallization
    Source : ieeexplore.ieee.org – 2020-08-18
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  • Low-Temperature Accelerated Gate Reliability of Schottky-type p-GaN Gate HEMTs
    Source : ieeexplore.ieee.org – 2020-08-18
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  • Development of a High Power Density Drive System for Unmanned Aerial Vehicles
    Source : ieeexplore.ieee.org – 2020-08-10
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  • Gate Reliability and its Degradation Mechanism in the Normally-off High Electron Mobility Transistors with Regrown p-GaN Gate
    Source : ieeexplore.ieee.org – 2020-08-10
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  • The Challenges For Electromagnetic Diagnosis And Control of Power Devices using Wide-Band Gap Semi-conductors
    Source : ieeexplore.ieee.org – 2020-08-06
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  • Low temperature defect passivation technology for semiconductor electronic devices—supercritical fluids treatment process
    Source : www.scopus.com – 2020-08-01
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