29 08 2022 | Innovation et technologique
San Diego, CA, July 13, 2022 (GLOBE NEWSWIRE) — Researchers at General Atomics (GA) announced a new concept for advancing fusion energy using advanced Silicon Carbide (SiC)–based materials that can withstand the intense conditions within a high-power fusion...
29 08 2022 | Innovation et technologie
Third-generation compound semiconductors such as SiC and GaN are very crucial to the future development of electrical vehicles (EV) and green power industries, and heterogeneous integration will play a pivotal role in determining market competitiveness… Pour en...
29 08 2022 | Innovation et technologique
Highlights • PCB embedding processes presented and technical challenges discussed • Review of requirements for embedding materials • List of 22 embedding demonstrators with key performance numbers • Discussion of reliability of embedded power packages Abstract...
29 08 2022 | Innovation et technologique
Positions Navitas as a pure-play GaN and SiC next-generation power semiconductor company GaN company Navitas Semiconductorhas announced the acquisition of GeneSiC Semiconductor, a SiC pioneer with deep expertise in SiC power device design and process. “GeneSiC is an...
4 07 2022 | Innovation et technologique, Innovation et technologie
La nouvelle activité de R&D d’Innoscience est située à Louvain, à proximité de l’IMEC – centre d’excellence très réputé en technologie avancée de semi-conducteurs – et de l’Université Catholique de Louvain (KU Leuwen) réputée pour ses activités en électronique de...
