4 07 2022 | Innovation et technologie, Innovation et technologique
The EPC7018 joins the company’s EPC7014, EPC7007, EPC7019 in its Rad-Hard family. All are offered in a chip-scale package, the same as the commercial eGaN FET and IC family. Packaged versions will be available from EPC Space. GaN has higher breakdown strength, lower...
20 06 2022 | Innovation et technologie
Nous présentons un enseignement sous forme de cours, Tps et projets tutorés sur le domaine de l’impression jet d’encre de matériaux pour l’électronique imprimée (réalisation de capteurs et d’OLED (organic light-emitting diode)). Nous aborderons avec les étudiants les...
7 06 2022 | Innovation et technologique
GaN Systems Inc of Ottawa, Ontario, Canada (a fabless developer of gallium nitride-based power switching semiconductors for power conversion and control applications) has announced availability of its GaN transistor ADS (Advanced Design System) models to facilitate...
30 05 2022 | Innovation et technologique
In this work we analysed the performance of AlGaN/GaN HEMT based on the linearity metrics for variable source/drain spacing with a fixed gate length (1μm) using Sentaurus TCAD device simulator. Various figure of merits such as transconductance, higher order...
30 05 2022 | Innovation et technologique
According to Yole’s Compound Semiconductor Quarterly Market Monitor on SiC and GaN applications, SiC device market revenue continues its growth and is expected to exceed $3 billion by 2025 with EV/HEV the killer application. Meanwhile, Yole projects that the...
