Les Rendez-Vous Fiabilité du CFF – Approche microstructurale pour l’évaluation du vieillissement des assemblages électroniques sans plomb en fatigue thermomécanique

19 09 2021

Venez partager un temps d’échanges sur des thèses en cours au sein de la communauté CFF, et en rapport avec la Fiabilité des Composants et Systèmes Electroniques. Ne manquez pas l’intervention de Emna BEN ROMDHANE de l’IRT St Exupéry sur l’étude de...

Gate-Driver Integrated Junction Temperature Estimation of SiC MOSFET Modules | IEEE Journals & Magazine | IEEE Xplore

6 09 2021 | Actualité Défense et Sécurité, Actualités NAE - RTI

SiC MOSFET power modules are becoming global solutions in systems operating in harsh environment, and due to large economic implications, achieving reliability of such systems is of utmost importance. Thereby, this paper is focused on improving the reliability of the...

Scopus – Miller Capacitance Cancellation to Improve SiC MOSFET’s Performance in a Phase-Leg Configuration

6 09 2021 | Actualité Défense et Sécurité, Actualités NAE - RTI

The drain to gate capacitance (Miller capacitance) of SiC MOSFETs leads to the Miller effect during switching transients. The Miller capacitance in a phase-leg configuration causes the crosstalk, the interaction between the two complementary switches, and the Miller...

Scopus preview – Scopus – Document details – Operation and performance of the 4H-SiC junctionless FinFET

6 09 2021 | Actualité Aéronautique, Actualité Défense et Sécurité, Actualités NAE - RTI

This work presents a comprehensive study on the behaviour and operation of a vertical 1.2 kV 4H-SiC junctionless power FinFET. The increased bulk conduction in the channel of this topology may bring reductions in the channel resistance compared to trench MOSFETs,...

Bias Temperature Instability of Silicon Carbide Power MOSFET under AC Gate Stresses | IEEE Journals & Magazine | IEEE Xplore

6 09 2021 | Actualité Aéronautique, Actualité Défense et Sécurité, Actualités NAE - RTI

With increasing applications of silicon carbide (SiC) power MOSFETs, more attention is being paid to reliability issues, among which the long-term stability of the gate threshold voltage is of paramount importance. In this study, laboratory experiments are conducted...

Les Rendez-Vous Fiabilité du CFF – Approche microstructurale pour l’évaluation du vieillissement des assemblages électroniques sans plomb en fatigue thermomécanique

Gate-Driver Integrated Junction Temperature Estimation of SiC MOSFET Modules | IEEE Journals & Magazine | IEEE Xplore

Scopus – Miller Capacitance Cancellation to Improve SiC MOSFET’s Performance in a Phase-Leg Configuration

Scopus preview – Scopus – Document details – Operation and performance of the 4H-SiC junctionless FinFET

Bias Temperature Instability of Silicon Carbide Power MOSFET under AC Gate Stresses | IEEE Journals & Magazine | IEEE Xplore

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