With increasing applications of silicon carbide (SiC) power MOSFETs, more attention is being paid to reliability issues, among which the long-term stability of the gate threshold voltage is of paramount importance. In this study, laboratory experiments are conducted...
Dans le cadre de ce travail, des filtres passe-bande hyperfréquences ont été développées pour répondre à des spécifications proposées en bandes W et G. Nous avons utilisé la technologie de micro-fabrication additive permettant d’avoir des cavités métalliques à air...
We investigate the accuracy and reliability of temperature mapping using scanning thermal microscopy (SThM) in contact and PeakForce tapping mode on the example of a GaN-on-SiC high electron mobility transistor (HEMT). HEMT steady-state and transient surface...
The ingenious multicomponent microstructure design provides a suitable strategy for gaining high-performance multi-functional integrated materials. Herein, the thermally stable SiC/Si3N4 composite ceramic felt was successfully fabricated via two-step carbothermal...
ON Semiconductor has announced a pair of 1200 V full SiC MOSFET 2-PACK modules further enhancing their range of products suitable for the challenging electric vehicle (EV) market. As sales of EV continue to grow, infrastructure must be rolled-out to meet the needs of...
