10 05 2021 | Actualité Défense et Sécurité
JEP184 provides definitions and procedures for characterizing the threshold voltage instability of SiC-based power electronic conversion semiconductor devices having a gate dielectric region biased to turn devices on and off. Bias Temperature Instabilities (BTI)...
10 05 2021 | Innovation et technologie
Power switches based on the wide bandgap (WBG) material gallium nitride (GaN) enable excellent efficiency and high switching frequency, starting a new era in power electronics. To support this development, Infineon Technologies AG adds the new CoolGaN IPS family of...
10 05 2021 | Innovation et technologie
Geneva, May 6, 2021 – STMicroelectronics (NYSE: STM), a global semiconductor leader serving customers across the spectrum of electronics applications, has announced a new family of ST Intelligent and Integrated Gallium Nitride (GaN) solutions, STi2GaN. STi2GaN is an...
19 04 2021 | Actualité Défense et Sécurité
Les technologies à base de nitrure de gallium (GaN) ont fait ces dernières années l’objet d’études qui ont confirmé leur aptitude à apporter de véritables gains en puissance, compacité, efficacité, rendement et fiabilité jusqu’alors inaccessibles....
