8 06 2020 | Actualité Défense et Sécurité
Saab has flown its active electronically scanned array (AESA) X-band radar in a Gripen fighter for the first time, the company announced on April 24. Source : Saab utilise un nouveau radar de chasse GaN – Stockholm, Sweden Partager Facebook Twitter Whatsapp...
11 05 2020 | Actualités NAE - RTI
Chaque semaine NAE vous propose une veille technologique sur une thématique de sa feuille de route technologique. Aujourd’hui retrouvez sa veille sur la thématique Fiabilité électronique qui abordera : Stability and Reliability of Lateral GaN Power Field-Effect...
11 05 2020 | Innovation et technologie
Temperature estimation of MOSFET is crucial, for failure of semiconductors is closely related to the junction temperature. In order to improve the reliability of semiconductor devices, it is necessary to realize on-line temperature monitoring. However, it remains a...
11 05 2020 | Innovation et technologie
In this article, an optimized carbon-doped AlGaN/AlN super-lattice (SL) buffer structure for GaN-based high electron mobility transistors, grown on 200-mm Si wafers is demonstrated. The resulting transistor structure features: 1) maximum vertical breakdown strength as...
11 05 2020 | Innovation et technologique
This paper describes reliability investigations in terms of power cycling tests for a new generation of top-side sintered or soldered 1200 V silicon carbide (SiC) MOSFETs for use in an advanced power module, designed for operation with 800 V bus voltage in electric...
