11 05 2020 | Innovation et technologie
Although GaN high electron mobility transistors (HEMTs) are one of the most promising semiconductor technologies for high power and high frequency applications, high device temperatures often lead to degraded performance and reliability. Most reports on the thermal...
11 05 2020 | Innovation et technologie
For various pulsed power electronics like, metal oxide semiconductor field-effect transistor (MOSFET), insulating gate bipolar transistor (IGBT), Gate turn-off thyristor (GTO), Integrated gate-commutated thyristor (IGCT), heat loads are often in the range of 10W/cm2...
11 05 2020 | Innovation et technologie
This work describes the development of a single phase water-cooled microfluidic heat exchanger for cooling very high heat flux electronics. The heat sink was designed for a unique additive manufacturing process capable of manufacturing millimeter-scale metallic parts...
11 05 2020 | Innovation et technologie
A broadband aperture-coupled magneto-electric (ME) dipole antenna array designed for metallic additive manufacturing (AM) is proposed. The proposed array antenna that operates in Ka-band consists of four radiating elements, a power divider and a flange for connecting...
4 05 2020 | Actualité Aéronautique
L’E-Fan X ne décollera pas. Victime de la crise mondiale du coronavirus, le programme a été arrêté. Airbus et Rolls-Royce ont conjointement décidé de mettre fin au démonstrateur technologique, qui a néanmoins permis de glaner plusieurs briques technologiques et...
