8 06 2026 | Innovation et technologique
Gallium Nitride (GaN) devices are becoming an attractive option in industry to achieve high-power-density and high-efficiency converter design. However, the dynamic on-resistance of GaN devices still remains a major concern. In this paper, a new dynamic on-resistance...
8 06 2026 | Innovation et technologique
Polar Semiconductor and Nexperia have announced a collaboration to make next generation power MOSFET devices at Polar’s US‑based wafer foundry. By combining Polar’s expertise in power semiconductor manufacturing and ongoing capacity expansion with Nexperia’s power...
8 06 2026 | Innovation et technologique
Power Integrations (PI)has introduced two ultra-slim, compact auxiliary power supply reference designs for NVIDIA Kyber 800 VDC AI data centres. “As the only company offering single-HEMT 1700 V GaN devices, Power Integrations can design these best-in-class, highly...
8 06 2026 | Innovation et technologique
La prochaine vague de création de valeur de l’intelligence artificielle se jouera peut-être dans les logiciels qui conçoivent les avions, les réacteurs nucléaires, les composants électroniques ou les centres de données. C’est le pari de NP Company, une jeune pousse...
8 06 2026 | Actualité Spatial, Innovation et technologique
The vacuum of space makes cooling extremely challenging. The Fraunhofer Institute for Telecommunications, Heinrich-Hertz-Institut, HHI is developing technologies for thermal management in aerospace applications. The research team is using femtosecond and nanosecond...
