15 12 2025 | Innovation et technologique
TORRANCE, Calif. and HYDERABAD, India, Dec. 08, 2025 (GLOBE NEWSWIRE) — Navitas Semiconductor Corporation (Nasdaq: NVTS), the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors and Cyient...
15 12 2025 | Actualité Spatial, Innovation et technologique
The demand for smaller satellites, with sophisticated computational capabilities and reliable and robust onboard processor systems to support the five to ten-year duration of a mission, is pushing the limits of the latest ultra‑deep‑submicron FPGAs and ASICs and their...
9 12 2025 | Innovation et technologique
Infineon Technologies’ gallium nitride (GaN) technology is powering Enphase Energy Inc.’s next-generation solar microinverters. Infineon’s CoolGaN bi-directional switch (BDS) technology enables significant enhancements in power output, energy efficiency, and system...
9 12 2025 | Innovation et technologique
Dans des produits et des processus afin d’offrir l’« excellence en matière d’alimentation » pour le prochain siècle de l’électronique. Les technologies de révolutionnaires, telles que l’intelligence artificielle, les véhicules électriques et les systèmes d’énergie...
9 12 2025 | Innovation et technologique
TORRANCE, Calif., Nov. 27, 2025 (GLOBE NEWSWIRE) — Navitas Semiconductor (Nasdaq: NVTS), the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) and the Asian distribution giant WT Microelectronics Co., Ltd. (TW:...
