SOPHIA ANTIPOLIS, France – June 10, 2025 │ KnowMade today announced the publication of its Q1 2025 IP report on GaN electronics, highlighting robust patenting activity across both power and RF segments. Amid on-going patent disputes between leaders in the power GaN...
LG Chem and Noritake Co-Develop High-Performance Paste for Automotive Power Semiconductors – LG Chem and Noritake form strategic partnership to advance materials for next-generation automotive power semiconductors – Jointly developed silver paste delivers...
Infineon Technologies a lancé une famille de transistors en nitrure de gallium (GaN) résistants aux radiations, fabriqués en interne dans sa propre fonderie. Les transistors GaN à haute mobilité d’électrons (HEMT) sont basés sur la technologie CoolGaN d’Infineon et...
Movable antenna (MA) has shown significant potential for improving the performance of integrated sensing and communication (ISAC) systems. In this paper, we model an MA-aided ISAC system operating in a communication full-duplex mono-static sensing framework. The...
Infineon Technologies AG is introducing the CoolGaN bidirectional switch (BDS) 650 V G5, a gallium nitride (GaN) switch capable of actively blocking voltage and current in both directions. Featuring a common-drain design and a double-gate structure, it leverages...
