5 05 2025 | Innovation et technologique
This paper presents a novel deep trench-type SiC MOSFET integrated with Schottky diodes (DT-JMOS) designed to improve oxide reliability and switching performances. In contrast to conventional SiC trench MOSFET with Schottky diodes (CT-JMOS), the DT-JMOS utilizes a...
28 04 2025 | Innovation et technologique
Rohm has developed the new 4-in-1 and 6-in-1 SiC molded modules in the HSDIP20 package optimized for PFC and LLC converters in onboard chargers (OBC) for xEVs (electric vehicles). The lineup includes six models rated at 750V (BSTxxx1P4K01) and seven products rated at...
22 04 2025 | Intelligence Artificielle, Innovation et technologique
Diodes Incorporated has expanded its SiC product portfolio with a series of five high-performance, low figure-of-merit (FOM) 650V SiC Schottky diodes. Rated at 4A, 6A, 8A, 10A, and 12A, the DSCxxA065LP series is housed in the ultra-thermally efficient T-DFN8080-4...
22 04 2025 | Innovation et technologique, Actualité Spatial
Depuis cinq ans, l’entreprise italienne D-Orbit lance des charges utiles pour ses clients à bord de ses véhicules de transfert orbital (OTV). Depuis, elle s’est positionnée comme un fournisseur fiable de transport spatial et de plateforme...
7 04 2025 | Innovation et technologique
The companies have agreed on a joint development initiative on GaN power technology, to advance the promising future of GaN power for consumer electronics, datacenters, automotive and industrial power systems and many more applications in the coming years. In...
