10 05 2021 | Innovation et technologie
Power switches based on the wide bandgap (WBG) material gallium nitride (GaN) enable excellent efficiency and high switching frequency, starting a new era in power electronics. To support this development, Infineon Technologies AG adds the new CoolGaN IPS family of...
10 05 2021 | Innovation et technologie
Geneva, May 6, 2021 – STMicroelectronics (NYSE: STM), a global semiconductor leader serving customers across the spectrum of electronics applications, has announced a new family of ST Intelligent and Integrated Gallium Nitride (GaN) solutions, STi2GaN. STi2GaN is an...
12 04 2021 | Actualités NAE - RTI
Chaque semaine NAE vous propose une veille technologique sur une thématique de sa feuille de route technologique. Aujourd’hui retrouvez sa veille sur la thématique Fiabilité électronique qui abordera : Solid-state power amplifier for RF and microwave uses like...
12 04 2021 | Actualité Défense et Sécurité, Actualité Aéronautique
SiC merged reverse conductive (MRC) power devices composed of both unipolar devices and bipolar devices have been developed to achieve a smaller chip size, a lower power loss, and a higher reliability. SiC MRC power devices such as SiC MRC‐MOSFET and SiC MRC‐IGBT can...
