This work presents a comprehensive study on the behaviour and operation of a vertical 1.2 kV 4H-SiC junctionless power FinFET. The increased bulk conduction in the channel of this topology may bring reductions in the channel resistance compared to trench MOSFETs,...
With increasing applications of silicon carbide (SiC) power MOSFETs, more attention is being paid to reliability issues, among which the long-term stability of the gate threshold voltage is of paramount importance. In this study, laboratory experiments are conducted...
We investigate the accuracy and reliability of temperature mapping using scanning thermal microscopy (SThM) in contact and PeakForce tapping mode on the example of a GaN-on-SiC high electron mobility transistor (HEMT). HEMT steady-state and transient surface...
The ingenious multicomponent microstructure design provides a suitable strategy for gaining high-performance multi-functional integrated materials. Herein, the thermally stable SiC/Si3N4 composite ceramic felt was successfully fabricated via two-step carbothermal...
ON Semiconductor has announced a pair of 1200 V full SiC MOSFET 2-PACK modules further enhancing their range of products suitable for the challenging electric vehicle (EV) market. As sales of EV continue to grow, infrastructure must be rolled-out to meet the needs of...
