11 05 2020 | Innovation et technologie
A broadband aperture-coupled magneto-electric (ME) dipole antenna array designed for metallic additive manufacturing (AM) is proposed. The proposed array antenna that operates in Ka-band consists of four radiating elements, a power divider and a flange for connecting...
27 04 2020 | Innovation et technologie
Three GaN switches from Power Integrations support 75W power supply adapter designs without a heatsink. Previous devices supported 55W designs.The three InnoSwitch3-MX isolated switcher chips work with the InnoMux controller for higher efficiency 75W power supplies...
20 04 2020 | Innovation et technologie
Transphorm Inc.— the leader in the design and manufacturing of the highest reliability and first JEDEC- and AEC-Q101 qualified high voltage gallium nitride (GaN) power semiconductors — today announced availability of its Gen IV GaN platform. Transphorm’s latest...
13 04 2020 | Actualités NAE - RTI
Chaque semaine NAE vous propose une veille technologique sur une thématique de sa feuille de route technologique. Aujourd’hui retrouvez sa veille sur la thématique Fiabilité électronique qui abordera : Transphorm and Microchip Combine High Reliability GaN and Digital...
13 04 2020 | Actualité Aéronautique, Actualité Défense et Sécurité
The Texas Instruments LMG341xR050 is a gallium nitride (GaN) power stage with an integrated gate driver and robust protection features, the 600V, 50milliohm device enables designers to realise new levels of efficiency in their power conversion systems, which includes...
