10 02 2020 | Innovation et technologie
Empower RF Systems Inc of Inglewood, CA and Holbrook, NY, USA (which produces RF and microwave power amplifiers for defense, commercial and industrial applications) says that its new model 2176 is a compact high-power gallium nitride on silicon carbide (GaN-on-SiC)...
10 02 2020 | Innovation et technologie
Have you used gallium-nitride (GaN) transistors in your designs yet? If not, now may be the time to give it some consideration. GaN devices have been around for several years now, but improved manufacturing methods now make them less expensive than a year or so ago.In...
10 02 2020 | Innovation et technologique
Self-heating in AlGaN/GaN high electron mobility transistors (HEMTs) negatively impacts device performance and reliability. Under nominal operating conditions, a hot-spot in the device channel develops under the drain side corner of the gate due to a concentration of...
3 02 2020 | Innovation et technologie
The increasing demand for higher data rates in telecommunications and higher resolution in industrial systems is pushing the frequency of operation higher for the electronics that support them. Many of these systems operate over a wide frequency spectrum and further...
