3 02 2020 | Innovation et technologie
The wide bandgap, high-breakdown electric field, and high carrier mobility makes GaN an ideal material for high-power and high-frequency electronics applications such as wireless communication and radar systems. However, the performance and reliability of GaN-based...
28 01 2020 | Actualité Aéronautique, Innovation et technologique
The 11th Call for Proposals (CfP11) was published on 14 January via the European Commission’s Funding & Tender Opportunities Portal. CfP11 has a budget of €45 million for 35 Topics, including 4 Thematic Topics. The deadline to apply is 28 April 2020 (17:00...
27 01 2020 | Actualité Aéronautique, Actualité Défense et Sécurité, Actualité Spatial
Transphorm, designer and manufacturer of the first JEDEC and AEC-Q101 qualified high voltage gallium nitride (GaN) power semiconductors—has confirmed that customer AES Aircraft Elektro/Elektronik System GmbH has released its first 650 V GaN-based power supplies....
20 01 2020 | Innovation et technologie
Charge trapping is one of the main reliability issues for GaN-based MIS-high-electron-mobility-transistor technologies. In this paper, we focus on the defects located at or close to the interface with the dielectric, which are responsible for the threshold voltage...
13 01 2020 | Innovation et technologie
Chaque semaine NAE vous propose une veille technologique sur une thématique de sa feuille de route technologique. Aujourd’hui retrouvez sa veille sur la thématique Fiabilité qui abordera : Mondial Dispositif d’alimentation basé sur GaN Marché 2017-2026 | Cree...
