10 02 2020 | Innovation et technologie
Have you used gallium-nitride (GaN) transistors in your designs yet? If not, now may be the time to give it some consideration. GaN devices have been around for several years now, but improved manufacturing methods now make them less expensive than a year or so ago.In...
10 02 2020 | Innovation et technologique
Self-heating in AlGaN/GaN high electron mobility transistors (HEMTs) negatively impacts device performance and reliability. Under nominal operating conditions, a hot-spot in the device channel develops under the drain side corner of the gate due to a concentration of...
3 02 2020 | Innovation et technologie
The increasing demand for higher data rates in telecommunications and higher resolution in industrial systems is pushing the frequency of operation higher for the electronics that support them. Many of these systems operate over a wide frequency spectrum and further...
3 02 2020 | Innovation et technologie
The wide bandgap, high-breakdown electric field, and high carrier mobility makes GaN an ideal material for high-power and high-frequency electronics applications such as wireless communication and radar systems. However, the performance and reliability of GaN-based...
28 01 2020 | Innovation et technologique, Actualité Aéronautique
The 11th Call for Proposals (CfP11) was published on 14 January via the European Commission’s Funding & Tender Opportunities Portal. CfP11 has a budget of €45 million for 35 Topics, including 4 Thematic Topics. The deadline to apply is 28 April 2020 (17:00...
