2 02 2026 | Innovation et technologique
Creating high-quality datasets for training machine learning models in specialized domains like pharmaceutical research is often constrained by the manual effort required to extract and compute critical parameters from heterogeneous literature. A novel deep...
![In-depth 2D FEM analysis of gate cracking in SiC MOSFETs under repetitive short-circuit conditions: Application of a damage-based model for crack length prediction [ESREF’25 Selected and Extended Full-Paper]](https://www.nae.fr/wp-content/uploads/2024/12/hal-logo-text-1.png)
26 01 2026 | Innovation et technologique
The on-state resistance RDSON is a key aging indicator of silicon carbide MOSFETs power module. It can provide information on both chip and packaging degradation allowing more reliable power electronic converter. This on-state resistance can be determined using both...
26 01 2026 | Innovation et technologique
The on-state resistance RDSON is a key aging indicator of silicon carbide MOSFETs power module. It can provide information on both chip and packaging degradation allowing more reliable power electronic converter. This on-state resistance can be determined using both...
19 01 2026 | Innovation et technologique
Australia’s factories and plants are ramping up for 2026 as global industrial automation hits US$158 billion (AU$346 billion) and power electronics (power modules and discrete devices) reaches about US$40 billion (AU$88 billion), powered by steady growth around 9 per...
19 01 2026 | Innovation et technologique
Silicon carbide (SiC) power devices possess exceptional electrical and thermal properties, making them strong candidates for deployment in extreme environments such as space. However, displacement damage induced by high-energy particles remains a critical factor that...
