This paper describes reliability investigations in terms of power cycling tests for a new generation of top-side sintered or soldered 1200 V silicon carbide (SiC) MOSFETs for use in an advanced power module, designed for operation with 800 V bus voltage in electric...
For reliability predictions, gallium nitride transistors require accurate estimations of the peak operating temperatures within the device. This article presents a new application of thermoreflectance-based temperature measurements performed on a gallium nitride high...
The wide band gap nature of SiC semiconductor makes high voltage power device possible to operate at high temperature. The high temperature operation of power device is expected to realize simplification of cooling system and miniaturizing the system size with smaller...
We review the Raman thermography technique, which has been developed to determine the temperature in and around the active area of semiconductor devices with submicron spatial and nanosecond temporal resolution. This is critical for the qualification of device...
In this paper, the advantages of SiC power modules to reduce peak junction temperature and power cycling effects are presented. A detailed power loss calculation and thermal model is developed and tested on a 480 V, 190A, 150 HP variable frequency drive (VFD) with SiC...
