8 06 2020 | Actualité Défense et Sécurité
Saab has flown its active electronically scanned array (AESA) X-band radar in a Gripen fighter for the first time, the company announced on April 24. Source : Saab utilise un nouveau radar de chasse GaN – Stockholm, Sweden Partager Facebook Twitter Whatsapp...
11 05 2020 | Actualités NAE - RTI
Chaque semaine NAE vous propose une veille technologique sur une thématique de sa feuille de route technologique. Aujourd’hui retrouvez sa veille sur la thématique Fiabilité électronique qui abordera : Stability and Reliability of Lateral GaN Power Field-Effect...
11 05 2020 | Innovation et technologie
In this article, an optimized carbon-doped AlGaN/AlN super-lattice (SL) buffer structure for GaN-based high electron mobility transistors, grown on 200-mm Si wafers is demonstrated. The resulting transistor structure features: 1) maximum vertical breakdown strength as...
11 05 2020 | Innovation et technologique
This paper describes reliability investigations in terms of power cycling tests for a new generation of top-side sintered or soldered 1200 V silicon carbide (SiC) MOSFETs for use in an advanced power module, designed for operation with 800 V bus voltage in electric...
11 05 2020 | Innovation et technologie
For reliability predictions, gallium nitride transistors require accurate estimations of the peak operating temperatures within the device. This article presents a new application of thermoreflectance-based temperature measurements performed on a gallium nitride high...
