Actualités
DGSI / Flash Ingérence n°65 – Les risques d’escroqueries liées au COVID-19
INGERENCE ECONOMIQUE Flash n° 65 – Avril 2020 Ce « flash » évoque des actions d’ingérence économique dont des sociétés françaises sont régulièrement victimes. Ayant vocation à illustrer la diversité des situations auxquelles les entreprises sont susceptibles d’être...
Veille NAE : Fiabilité électronique 20200511
Chaque semaine NAE vous propose une veille technologique sur une thématique de sa feuille de route technologique. Aujourd’hui retrouvez sa veille sur la thématique Fiabilité électronique qui abordera : Stability and Reliability of Lateral GaN Power Field-Effect...
Stability and Reliability of Lateral GaN PowerField-Effect Transistors
Temperature estimation of MOSFET is crucial, for failure of semiconductors is closely related to the junction temperature. In order to improve the reliability of semiconductor devices, it is necessary to realize on-line temperature monitoring. However, it remains a...
Analysis of an AlGaN/AlN Super-Lattice Buffer Concept for 650-V Low-Dispersion and High-Reliability GaN HEMTs – IEEE Journals & Magazine
In this article, an optimized carbon-doped AlGaN/AlN super-lattice (SL) buffer structure for GaN-based high electron mobility transistors, grown on 200-mm Si wafers is demonstrated. The resulting transistor structure features: 1) maximum vertical breakdown strength as...
Reliability of SiC MOSFET with Danfoss Bond Buffer Technology in Automotive Traction Power Modules – VDE Conference Publication
This paper describes reliability investigations in terms of power cycling tests for a new generation of top-side sintered or soldered 1200 V silicon carbide (SiC) MOSFETs for use in an advanced power module, designed for operation with 800 V bus voltage in electric...
Dynamic Temperature Measurements of a GaN DC–DC Boost Converter at MHz Frequencies – IEEE Journals & Magazine
For reliability predictions, gallium nitride transistors require accurate estimations of the peak operating temperatures within the device. This article presents a new application of thermoreflectance-based temperature measurements performed on a gallium nitride high...
Packaging for SiC power device – IEEE Conference Publication
The wide band gap nature of SiC semiconductor makes high voltage power device possible to operate at high temperature. The high temperature operation of power device is expected to realize simplification of cooling system and miniaturizing the system size with smaller...
A Review of Raman Thermography for Electronic and Opto-Electronic Device Measurement With Submicron Spatial and Nanosecond Temporal Resolution – IEEE Journals & Magazine
We review the Raman thermography technique, which has been developed to determine the temperature in and around the active area of semiconductor devices with submicron spatial and nanosecond temporal resolution. This is critical for the qualification of device...
Thermal Characterization of SiC Modules for Variable Frequency Drives – IEEE Conference Publication
In this paper, the advantages of SiC power modules to reduce peak junction temperature and power cycling effects are presented. A detailed power loss calculation and thermal model is developed and tested on a 480 V, 190A, 150 HP variable frequency drive (VFD) with SiC...
A Novel Method for Monitoring the Junction Temperature of SiC MOSFET On-line Based on On-state Resistance – IEEE Conference Publication
Temperature estimation of MOSFET is crucial, for failure of semiconductors is closely related to the junction temperature. In order to improve the reliability of semiconductor devices, it is necessary to realize on-line temperature monitoring. However, it remains a...
