Richardson Electronics has announced a partnership with power SiC company NoMIS Power, adding capabilities across 1.2 kV to 10 kV, with particular emphasis on medium-voltage and high-voltage SiC solutions at 3.3 kV and above. The partnership is expected to accelerate...
The rapid growth of autonomous military systems is creating a new challenge for the defense industry, working to keep equipment operating when navigation becomes unreliable. Across recent conflict zones and contested regions, GNSS disruption is affecting UAVs,...
Efficient heat dissipation across GaN/SiC interfaces is critical for the reliability of high-power devices, yet their interfacial thermal transport behavior remains insufficiently understood. Here, using a high-fidelity machine-learning interatomic potential, we...
Researchers at Sandia National Laboratories and Auburn University in the US have developed a new method to more accurately detect atomic-scale defects in electronic materials, an advance that could be particularly useful for wide-bandgap (WBG) semiconductors such as...
We propose a new numerical method to estimate the fault tolerance of failure modes in digital circuit structures with a generative network sampling technique. From a random input of generated bitwise configurations of ideally digitalised analog currents in the digital...
